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  p-to263-15-1 data sheet 1 2003-03-11 trilithic data sheet bts 7810 k 1overview 1.1 features  quad d-mos switch  free configurable as bridge or quad-switch  optimized for dc motor management applications low r ds on : 26 m ? high-side switch, 14 m ? low-side switch (typical values @ 25 c)  maximum peak current: typ. 42 a @ 25 c =  very low quiescent current: typ. 4 a @ 25 c =  small outline, thermal optimized powerpak  load and gnd-short-circuit-protection  operates up to 40 v  status flag for over temperature  open load detection in off-mode  overtemperature shut down with hysteresis  internal clamp diodes  isolated sources for external current sensing  under-voltage detection with hysteresis 1.2 description the bts 7810 k is part of the trilithic family containing three dies in one package: one double high-side switch and two low-side switches. the drains of these three vertical dmos chips are mounted on separated leadframes. the sources are connected to individual pins, so the bts 7810 k can be used in h-bridge- as well as in any other configuration. the double high-side is manufactured in smart sipmos ? technology which combines low r ds on vertical dmos power stages with cmos control circuit. the high-side switch is fully protected and contains the control and diagnosis circuit. to achieve low r ds on and fast switching performance, the low-side switches are manufactured in s-fet 2 logic level technology. the equivalent standard product is the spd30n06s2l-13 . type ordering code package bts 7810 k q67060-s6129 p-to263-15-1
bts 7810 k data sheet 2 2003-03-11 1.3 pin configuration (top view) figure 1 1 2 3 4 5 6 7 9 10 11 12 13 14 15 nc sl1 il1 ih1 nc sh2 sl2 st1 sh1 dhvs gnd ih2 st2 il2 nc 8 18 17 16 dhvs dl1 dl2 heat-slug 1 heat-slug 2 heat-slug 3 molding compound
bts 7810 k data sheet 3 2003-03-11 pins written in bold type need power wiring. 1.4 pin definitions and functions pin no. symbol function 1 nc not connected 2 sl1 source of low-side switch 1 3 il1 analog input of low-side switch 1 4 nc not connected 5 ih1 digital input of high-side switch 1 6 st1 status of high-side switch 1; open drain output 7 sh1 source of high-side switch 1 8 dhvs drain of high-side switches and power supply voltage 9 gnd ground of high-side switches 10 ih2 digital input of high-side switch 2 11 st2 status of high-side switch 2; open drain output 12 sh2 source of high-side switch 2 13 il2 analog input of low-side switch 2 14 sl2 source of low-side switch 2 15 nc not connected 16 dl2 drain of low-side switch 2 heat-slug 3 17 dhvs drain of high-side switches and power supply voltage heat-slug 2 18 dl1 drain of low-side switch 1 heat-slug 1
bts 7810 k data sheet 4 2003-03-11 1.5 functional block diagram figure 2 block diagram sh2 dhvs st1 il1 gnd ih1 sl2 8, 17 10 5 12 14 9 13 3 r o1 r o2 biasing and protection 7 18 6 ih2 il2 2 16 sl1 dl2 sh1 dl1 diagnosis driver out 0 in 0 l l 0 1 l h 1 0 h l 1 1 h h st2 11
bts 7810 k data sheet 5 2003-03-11 1.6 circuit description input circuit the control inputs ih1,2 consist of ttl/cmos compatible schmitt-triggers with hysteresis. buffer amplifiers are driven by these stages and convert the logic signal into the necessary form for driving the power output stages. the inputs are protected by esd clamp-diodes. the inputs il1 and il2 are connected to the gates of the standard n-channel vertical power-mos-fets. output stages the output stages consist of a low r ds on power-mos h-bridge. in h-bridge configuration, the d-mos body diodes can be used for freewheeling when commutating inductive loads. if the high-side switches are used as single switches, positive and negative voltage spikes which occur when driving inductive loads are limited by integrated power clamp diodes. short circuit protection the outputs are protected against ? output short circuit to ground ? overload (load short circuit). an internal op-amp controls the drain-source-voltage by comparing the ds-voltage- drop with an internal reference voltage. above this trippoint the op-amp reduces the output current depending on the junction temperature and the drop voltage. in the case of overloaded high-side switches the status output is set to low. overtemperature protection the high-side switches incorporate an overtemperature protection circuit with hysteresis which switches off the output transistors and sets the status output to low. undervoltage-lockout (uvlo) when v s reaches the switch-on voltage v uvon the ic becomes active with a hysteresis. the high-side output transistors are switched off if the supply voltage v s drops below the switch off value v uvoff. open load detection open load is detected by voltage measurement in off state. if the output voltage exceeds a specified level the error flag is set with a delay.
bts 7810 k data sheet 6 2003-03-11 status flag the two status flag outputs are an open drain output with zener-diode which require a pull-up resistor, c.f. the application circuit on page 15. st1 and st2 provide separate diagnosis for each high-side switch. various errors as listed in the table ?diagnosis? are detected by switching the open drain output st1/2 to low. forward current in the integrated body diode of the highside switch may cause undefined voltage levels at the corresponding status output. the open load detection can be used to detect a short to vs as long as both lowside switches are off and r ol is disconnected from 5v by bcr192w. 2 truthtable and diagnosis (valid only for the high-side-switches) flag ih1 ih2 sh1 sh2 st1 st2 remarks inputs outputs normal operation; identical with functional truth table 0 0 1 1 0 1 0 1 l l h h l h l h 1 1 1 1 1 1 1 1 stand-by mode switch2 active switch1 active both switches active open load at high-side switch 1 open load at high-side switch 2 0 1 x x x x 0 1 z h x x x x z h 0 1 1 1 1 1 0 1 detected detected overtemperature high-side switch1 0 1 x x l l x x 1 0 1 1 detected overtemperature high-side switch2 x x 0 1 x x l l 1 1 1 0 detected overtemperature both high-side switches 0 x 1 0 1 x l l l l l l 1 1 0 1 0 1 detected detected undervoltage x x l l 1 1 not detected note: * multiple simultaneous errors are not shown in this table inputs: outputs: status: 0 = logic low z = output in tristate condition 1 = no error 1 = logic high l = output in sink condition 0 = error x = don?t care h = output in source condition x = voltage level undefined
bts 7810 k data sheet 7 2003-03-11 3 electrical characteristics 3.1 absolute maximum ratings ? 40 c < t j < 150 c parameter symbol limit values unit remarks min. max. high-side-switches (pins dhvs, ih1,2 and sh1,2) supply voltage v s ? 0.3 42 v ? supply voltage for full short circuit protection v s(scp) 28 v ? hs-drain current i s ? 10 * a t c = 125c; dc hs-input current i ih ? 5 5 ma pin ih1 and ih2 hs-input voltage v ih ? 10 16 v pin ih1 and ih2 note: * internally limited status output st (pins st1 and st2) status pull up voltage v st ? 0.3 5.4 v ? status output current i st ? 5 5 ma pin st1 or st2 low-side-switches (pins dl1,2, il1,2 and sl1,2) drain- source break down voltage v dsl 55 ? v v il =0v; i d 1ma ls-drain current i dl ?20 20 a t c = 125c; dc ls-drain current t c = 85c i dl ?25a t p < 100 ms; < 0.1 ?100a t p < 1 ms; < 0.1 ls-input voltage v il ? 20 20 v pin il1 and il2 temperatures junction temperature t j ? 40 150 c? storage temperature t stg ? 55 150 c?
bts 7810 k data sheet 8 2003-03-11 note: maximum ratings are absolute ratings; exceeding any one of these values may cause irreversible damage to the integrated circuit. note: in the operating range the functions given in the circuit description are fulfilled. thermal resistances (one hs-ls-path active) ls-junction case r thjc l ?0.6k/w hs-junction case r thjc h ? 0.75 k/w junction ambient r thja = t j(hs) /(p (hs) +p (ls) ) r thja ? 35 k/w device soldered to reference pcb with 6cm 2 cooling area esd protection (human body model acc. mil std 883d, method 3015.7 and eos/ esd assn. standard s5.1 - 1993) input ls-switch v esd 0.5 kv input hs-switch v esd 1kv status hs-switch v esd 2kv output ls and hs-switch v esd 4 kv all other pins connected to ground 3.2 operating range ? 40 c < t j < 150 c parameter symbol limit values unit remarks min. max. supply voltage v s v uvoff 42 v after v s rising above v uvon input voltages hs v ih ? 0.3 15 v ? input voltages ls v il ? 0.3 20 v ? status output current i st 02ma? junction temperature t jhs ? 40 150 c? 3.1 absolute maximum ratings (cont?d) ? 40 c < t j < 150 c parameter symbol limit values unit remarks min. max.
bts 7810 k data sheet 9 2003-03-11 3.3 electrical characteristics i sh1 = i sh2 = i sl1 = i sl2 = 0 a; ? 40 c < t j < 150 c; 8 v < v s < 18 v unless otherwise specified parameter symb ol limit values unit test condition min. typ. max. current consumption hs-switch quiescent current i s q ?49 aih1 = ih2 = 0v t j = 85 c ??20 aih1 = ih2 = 0v supply current i s ? 2.5 4.5 ma ih1 or ih2 = 5 v ? 5 9 ma ih1 and ih2 = 5 v leakage current of highside switch i sh lk ??7 a v ih = v sh = 0 v t j = 85 c leakage current through logic gnd in free wheeling condition i lkcl = i fh + i sh ?2.210ma i fh =5 a current consumption ls-switch input current i il ?10100na v il = 20 v v dsl = 0 v leakage current of lowside switch i dl lk ??12 a v il = 0 v v dsl = 40 v t j = 85 c under voltage lockout (uvlo) hs-switch switch-on voltage v uvon ??5v v s increasing switch-off voltage v uvoff 1.8 ? 4.5 v v s decreasing switch on/off hysteresis v uvhy ?1?v v uvon ? v uvoff
bts 7810 k data sheet 10 2003-03-11 output stages inverse diode of high- side switch; forward- voltage v fh ?0.81.2v i fh = 5 a inverse diode of lowside switch; forward-voltage v fl ?0.81.2v i fl = 5 a static drain-source on-resistance of highside switch r ds on h ? 2635m ? i sh =5a t j = 25 c static drain-source on-resistance of lowside switch r ds on l ? 1417m ? i sl =5a; v il = 5 v t j = 25 c static path on-resistance r ds on ??100m ? r ds on h +r ds on l i sh =5a; short circuit of highside switch to gnd initial peak sc current i scp h 35 48 65 a t j = ? 40 c initial peak sc current i scp h 30 42 54 a t j = + 25 c initial peak sc current i scp h 25 32 42 a t j = + 150 c note: integrated protection functions are designed to prevent ic destruction under fault conditions. protection functions are not designed for continuous or repetitive operation. peak sc current is significantly lower at v s > 18v short circuit of highside switch to v s output pull-down-resistor r o 7 1442k ? v dsl = 3 v 3.3 electrical characteristics (cont?d) i sh1 = i sh2 = i sl1 = i sl2 = 0 a; ? 40 c < t j < 150 c; 8 v < v s < 18 v unless otherwise specified parameter symb ol limit values unit test condition min. typ. max.
bts 7810 k data sheet 11 2003-03-11 thermal shutdown thermal shutdown junction temperature t j sd 155 180 190 c? thermal switch-on junction temperature t j so 150 170 180 c? temperature hysteresis ? t ?10? c ? t = t jsd ? t jso status flag output st of highside switch low output voltage v st l ?0.20.6v i st = 1.6 ma leakage current i st lk ??5 a v st = 5 v zener-limit-voltage v st z 5.4 ? v i st = 1.6 ma status change after positive input slope with open load t d(stoffo+) ??20 s status change after negative input slope with open load t d(stoffo-) ??700 s status change after positive input slope with overtemperature t d(stofft+) ?1.610 s r st = 47 k ? status change after negative input slope with overtemperature t d(stofft-) ?14100 s r st = 47 k ? note: times are not subject to production test - specified by design open load detection in off condition open load detection voltage v out(ol) 234v 3.3 electrical characteristics (cont?d) i sh1 = i sh2 = i sl1 = i sl2 = 0 a; ? 40 c < t j < 150 c; 8 v < v s < 18 v unless otherwise specified parameter symb ol limit values unit test condition min. typ. max.
bts 7810 k data sheet 12 2003-03-11 switching times of highside switch turn-on-time; to 90% v sh t on ?100220 sr load = 12 ? v s = 12 v turn-off-time; to 10% v sh t off ?120250 sr load = 12 ? v s = 12 v slew rate on 10 to 30% v sh dv/ dt on ?0.51.1v / sr load = 12 ? v s = 12 v slew rate off 70 to 40% v sh -dv/ dt off ?0.71.3v / sr load = 12 ? v s = 12 v note: switching times are not subject to production test - specified by design switching times of low-side switch turn-on delay time; v il = 5v; r gate = 16 ? t d_on_l ? 40 ns resistive load i sl = 10 a; v s = 12 v switch-on time; v il = 5v; r gate = 16 ? t on_l ? 170 ns resistive load i sl = 10 a; v s = 12 v switch-off delay time; v il = 5v; r gate = 16 ? t d_off_l ? 100 ns resistive load i sl = 10 a; v s = 12 v switch-off time; v il = 5v; r gate = 16 ? t off_l ? 200 ns resistive load i sl = 10 a; v s = 12 v input to source charge; q is ?4.56nc i sl = 10 a; v s = 40 v input to drain charge; q id ? 1624nc i sl = 10 a; v s = 40 v input charge total; q i ? 5569nc i sl = 10 a; v s = 40 v v il = 0 to 10 v input plateau voltage; v (plateau) ?2.6?v i sl = 10 a; v s = 40 v note: switching times and input charges are not subject to production test - specified by design 3.3 electrical characteristics (cont?d) i sh1 = i sh2 = i sl1 = i sl2 = 0 a; ? 40 c < t j < 150 c; 8 v < v s < 18 v unless otherwise specified parameter symb ol limit values unit test condition min. typ. max.
bts 7810 k data sheet 13 2003-03-11 note: the listed characteristics are ensured over the operating range of the integrated circuit. typical characteristics specify mean values expected over the production spread. if not otherwise specified, typical characteristics apply at t a = 25 c and v s = 12 v. control inputs of highside switches ih 1, 2 h-input voltage v ih high ??2.5v? l-input voltage v ih low 1??v? input voltage hysterese v ih hy ?0.5?v? h-input current i ih high 53060 a v ih = 5 v l-input current i ih low 51425 a v ih = 0.4 v input series resistance r i 2.7 4 6 k ? ? zener limit voltage v ih z 5.4 ? ? v i ih = 1.6 ma control inputs il1, 2 gate-threshold-voltage i dl = 1 ma v il th ?1.92.6v t j = ? 40 c ?1.7? t j = + 25 c 0.8 1.1 ? t j = + 150 c 3.3 electrical characteristics (cont?d) i sh1 = i sh2 = i sl1 = i sl2 = 0 a; ? 40 c < t j < 150 c; 8 v < v s < 18 v unless otherwise specified parameter symb ol limit values unit test condition min. typ. max.
bts 7810 k data sheet 14 2003-03-11 figure 3 test circuit hs-source-current named during short circuit named during leakage- cond. i sh1,2 i scp h i dl lk sh2 dhvs st1 il1 gnd ih1 sl2 8, 17 10 5 12 14 6 13 3 r o1 r o2 biasing and protection 7 18 6 ih2 il2 2 16 sl1 dl2 sh1 dl1 i gnd i lkcl v s c l 100f c s 470nf i fh1,2 i s i sh2 i dl2 i sh1 i dl1 i dl lk 2 i dl lk 1 v dsl1 - v fl1 v dsl2 - v fl2 - v fh2 v dsh2 - v fh1 v dsh1 v uvon v uvoff i sl2 i sl1 i scp l 1 i scp l 2 v il2 v il th 2 v il1 v il th 1 v ih1 v ih2 gate driver gate driver diagnosis i st1 i st lk1 i ih1 i ih1 i il1 i il2 st2 11 v st2 v stl2 v stz2 v st1 v stl1 v stz1 i st2 i st lk2
bts 7810 k data sheet 15 2003-03-11 figure 4 application circuit sh2 dhvs st1 il1 gnd ih1 sl2 8, 17 10 5 12 14 9 13 3 tle 4278g v s =12v d01 z39 c s 10f c d 47nf d i q reset watchdog c q 22f v cc wd r gnd p r o1 r o2 biasing and protection m 7 18 6 ih2 il2 2 16 sl1 dl2 sh1 dl1 r q 100 k ? ? ? ? r s 10 k ? ? ? ? gate driver gate driver diagnosis st2 11 r s 10 k ? ? ? ? r q 100 k ? ? ? ? optional for open load in off r ol 560ohm to c bcr192w can be replaced by diode when short to vs detection is not needed
bts 7810 k data sheet 16 2003-03-11 4 package outlines a max. b a 0.25 m 0.1 typical ?.2 21.6 8.3 x2, 1) (15) ?.2 9.25 ?.3 1 0...0.15 0.8 ?.1 ?.1 1.27 4.4 b 0.5 ?.1 ?.3 2.7 4.7 ?.5 0.05 1) 0.1 metal surface min. x1 = 3.57, x2 = 7.03, y = 6.9 2.4 14 x 1.4 7.65 1) 8.18 ?.15 1 ?.2 ?.15 5.56 4.8 x1, 1) 8? b all metal surfaces tin plated, except area of cut. 21.6 8.4 16 9.5 0.4 0.8 4 1 p-to263-15-1 (plastic transistor single footprint footprint sorts of packing package outlines for tubes, trays etc. are contained in our data book ?package information?. dimensions in mm smd = surface mounted device
bts 7810 k data sheet 17 2003-03-11 edition 2003-01 published by infineon technologies ag, st.-martin-strasse 53, d-81669 mnchen, germany ? infineon technologies ag 3/13/03. all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer information for further information on technology, delivery terms and conditions and prices please contact your nearest infi- neon technologies office in germany or our infineon technologies representatives worldwide (see address list). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.


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